Breaking Barriers: Infineon's SiC Superjunction for 40% EV Power Gain

Infineon's revolutionary trench-based silicon carbide (SiC) superjunction technology represents a watershed moment in electric vehicle development, breaking through previous technical barriers to deliver unprecedented power efficiency gains. This groundbreaking approach combines advanced trench semiconductor processes with superjunction design principles, resulting in compact, high-performance components that address critical challenges in EV powertrain systems.

Key Takeaways

Infineon's TSJ technology delivers up to 40% improvement in power density for electric vehicle powertrains
The technology supports power levels up to 800kW in automotive applications while reducing cooling requirements
Technical breakthrough that breaks traditional unipolar conduction limits in silicon carbide semiconductors
New design achieves 25% higher current capability in traction inverters without compromising reliability
Available in voltage classes from 400V to 3300V with applications beyond automotive industry

Performance Leap in Electric Vehicle Powertrains

Infineon's trench-based SiC superjunction (TSJ) technology marks a significant advancement in power semiconductor technology, providing EV manufacturers with compelling performance advantages. The most notable improvement is the up to 40% increase in power density, enabling the design of more compact and efficient electric vehicles. This technology also delivers 25% higher current capability in automotive traction inverters while maintaining crucial short-circuit reliability.

Beyond raw power improvements, TSJ technology reduces switching losses by 25% compared to first-generation technology. This efficiency gain directly translates to less heat generation, smaller cooling systems, and simplified overall system architecture in EVs. The technology supports power levels up to 800kW in Infineon's new ID-PAK platform specifically designed for automotive applications, making it suitable for everything from compact urban vehicles to high-performance electric sports cars.

A modern electric vehicle powertrain system highlighting the compact traction inverter using Infineon's CoolSiC technology, showing the reduced size compared to conventional systems.

Breaking Physical Limits with Superjunction Technology

At the heart of this innovation is Infineon's ability to overcome traditional physical constraints in semiconductor design. The TSJ technology breaks the conventional unipolar conduction limit in silicon carbide materials, fundamentally improving the trade-off between specific on-resistance and blocking voltage – two properties that typically work against each other in semiconductor design.

The technical approach uses a deep-implanted superjunction technique with high-energy implantations (MeV) to achieve a maximum junction depth of 12μm. This results in a specific on-resistance of 4.5mΩcm², which is an impressive 45% below the SiC unipolar limit. This scalable solution makes TSJ ideal for medium-voltage-class, high-frequency, solid-state switches, effectively combining the advantages of trench technology with superjunction design.

Close-up of an Infineon SiC semiconductor chip featuring the trench-based superjunction structure, with visible patterns of the semiconductor architecture against a dark background.

Technical Superiority of CoolSiC™ MOSFETs

Infineon's CoolSiC™ MOSFETs showcase technical excellence across multiple parameters. They feature the lowest gate charge and device capacitance levels among SiC switches, eliminating reverse recovery losses of the anti-parallel diode. The state-of-the-art trench design enables superior gate oxide reliability while maintaining a threshold voltage of Vth = 4V that ensures safe operation.

These MOSFETs offer exceptional short-circuit robustness without compromising reliability, along with temperature-independent low switching losses. They also feature threshold-free on-state characteristics, with RDS(on) capable of changing from 34mΩ to 28mΩ with gate-source voltage adjustments from 15V to 18V at 60°C, offering flexible performance optimization capabilities.

Comprehensive Voltage and Resistance Offerings

The versatility of Infineon's technology is evident in its extensive range of product specifications. CoolSiC™ MOSFETs are available in multiple voltage classes: 400V, 650V, 750V, 1200V, 1700V, 2000V, and 3300V. On-resistance ratings span from 7mΩ up to 1000mΩ, providing options for various power requirements across different EV components.

This variety allows system designers to select precisely the right components for specific applications, achieving peak efficiency of more than 99% with technologies like full-bridge totem pole PFC. The broad product lineup makes the technology adaptable to diverse automotive needs, from small auxiliary systems to main drivetrain components.

Advanced Packaging Solutions for Automotive Applications

Infineon has developed specialized packaging solutions to maximize the performance potential of their TSJ technology in automotive environments. The components are available in discrete housing and modules specifically tailored for automotive use. The TO-247PLUS-4-HCC package features high creepage (14mm) for high voltage operation and 5.5mm clearance for safety.

The ID-PAK platform is specifically designed for automotive applications, while the EasyPACK™ package provides a four-channel boost configuration using 2kV SiC MOSFET. All packaging solutions are engineered to optimize thermal performance and reliability, critical factors in the demanding automotive environment.

Versatile Applications Beyond Electric Vehicles

While electric vehicle powertrains represent a primary application for this technology, Infineon's TSJ technology offers benefits across multiple industries. It's ideal for photovoltaic inverters, maximizing renewable energy efficiency, and excellent for traction inverters, on-board chargers, and battery charging systems. The technology is also suitable for energy storage systems requiring high efficiency.

Industrial applications benefit from these components in motor drives, while UPS systems and power supplies gain improved efficiency. The technology performs exceptionally in both hard and resonant-switching topologies like LLC and ZVS. Additionally, these components are easy to implement as they can be driven like IGBTs or MOSFETs with standard drivers, reducing barriers to adoption.

Real-World Efficiency and Reliability Benefits

The practical advantages of Infineon's technology translate to tangible performance gains in real-world applications. The technology enables highly efficient topologies achieving over 98% system efficiency while delivering high lifetime reliability even in demanding conditions. It provides robust performance in high-temperature operating environments, making it ideal for the challenging conditions found in automotive applications.

CoolSiC™ is positioned for applications where high power combines with high-temperature operation. When compared to CoolMOS™ (which offers cost/performance benefits up to 97% efficiency) and CoolGaN™ (which provides top efficiency/density in different applications), CoolSiC™ with TSJ technology finds its sweet spot in high-power automotive applications. The efficiency improvements significantly contribute to overall EV range extension, addressing one of the most persistent challenges in electric vehicle adoption.